In this work, we have investigated electron transport across Galfenol (Fe_xGa_1-x) and Nickel-based Schottky contacts deposited onto n-Si substrates using conventional DC current-voltage (I–V) measurements and have uniquely studied the effects of improper back contact causing additional bias dependent Resistance-capacitance (R–C) components using AC Impedance spectroscopy by choosing proper equivalent circuit models. Junction barrier height and ideality factor were obtained from DC current-voltage characteristics, and bias dependent impedance measurements have been carried out. From Impedance spectroscopy analysis the magnitudes of depletion layer capacitance and barrier height have been calculated and have been compared for both the junctions, and the effect of additional components has been distinguished. Negative capacitance behaviour at lower frequencies and higher forward bias regime has been observed, which might be attributed to interface states in presence of injected charge carriers and by choosing an equivalent circuit having inductor-resistor (R-L) type relaxation, better fit of experimental Nyquist plots of FeGa Schottky junction have been achieved.

在这项工作中，我们研究了穿过 Galfenol (Fe _x Ga _1-x) 和镍基肖特基触点使用传统的直流电流-电压 (I-V) 测量沉积在 n-Si 衬底上，并独特地研究了不正确的背接触导致额外的偏置相关电阻电容 (R-C) 组件使用交流电的影响通过选择适当的等效电路模型来进行阻抗谱分析。结势垒高度和理想因子是从直流电流-电压特性中获得的，并且已经进行了与偏置相关的阻抗测量。根据阻抗谱分析，已经计算并比较了两个结的耗尽层电容和势垒高度的大小，并且区分了附加组件的影响。已经观察到在较低频率和较高正向偏置状态下的负电容行为，