Traditional reactive gas O₂ was replaced by CO₂ to fabricate carbon-doped tin oxide (SnO_x-C) using pulse direct current magnetron sputtering (pDC-MS) with different Ar/CO₂ flow ratios, the physical and electrochemical properties of SnO_x-C films were characterized by X-ray reflection (XRR), X-ray photoelectron spectroscopy (XPS), battery tester, et al. The results showed that CO₂ gas would be decomposed into C and O atoms by Ar⁺ bombardment, the sputtered Sn particles were oxidized by O atoms and the C atoms were introduced simultaneously in the form of interstitial atoms. All properties of the films changed orderly with the increase of CO₂ flow ratios and the sputtering atmosphere of Ar/CO₂ = 18/12 corresponded to one turning point, moreover, the films deposited with high CO₂ flow ratios (CO₂ ≥ 12 sccm) showed an improved cycle performance contrasted with the films deposited with low CO₂ flow ratios (CO₂ ≤ 7 sccm) or the pure SnO_x films without carbon-doped. The composition of SnO_1.64-C film with the maximum carbon content of 6.1% was obtained by the sputtering condition of Ar/CO₂ = 15/15, it possessed an extra capacity of ~80 mAh/g compared with that of SnO_x film and delivered a stable discharge capacity of 483.3 mAh/g, retention rate of 77.7% in the 50th cycle at a constant current density of 44 μA/cm².

使用具有不同 Ar/CO ₂流量比的脉冲直流磁控溅射 (pDC-MS) 将传统的反应气体 O ₂替换为 CO ₂以制备碳掺杂的氧化锡 (SnO _x -C) ，SnO 的物理和电化学性能_x- C薄膜通过X射线反射（XRR）、X射线光电子能谱（XPS）、电池测试仪等进行表征。结果表明，CO ₂气体在Ar ⁺轰击下分解为C和O原子，溅射的Sn粒子被O原子氧化，同时C原子以间隙原子的形式引入。薄膜各项性能随着CO ₂的增加而有序变化流量比和 Ar/CO ₂  = 18/12的溅射气氛对应于一个转折点，此外，与高 CO ₂流量比（CO ₂  ≥ 12 sccm）沉积的薄膜相比，沉积的薄膜显示出改善的循环性能低 CO ₂流量比 (CO ₂  ≤ 7 sccm) 或不含碳掺杂的纯 SnO _x薄膜。在Ar/CO ₂  = 15/15的溅射条件下，得到最大碳含量为6.1%的SnO _1.64 -C薄膜的组成，与SnO _x相比具有~80 mAh/g的额外容量薄膜并在44 μA/cm ²的恒定电流密度下提供483.3 mAh/g的稳定放电容量，第50次循环中的保留率为77.7% 。