Thin films of indium zinc oxide (IZO) were deposited on polyethylene terephthalate (PET) substrate with varying plasma power (from 100 W to 300 W) using the radio-frequency (RF) magnetron sputtering technique and electroluminescence (EL) devices. The IZO films that were obtained from this process were treated with oxygen plasma powers using the plasma-enhanced chemical vapor deposition (PECVD) system. After this treatment, the microstructural, electrical, and optical properties of IZO films were observed and reported. The result showed that the IZO/PET films was fabricated at the lowest resistivity (), while the optical characterization displayed the maximum transmittance of 95% in the visible region with a smooth morphology and good crystalline structured, affected by the 300 W of plasma power with the optimum carrier concentration () and hall mobility (42.12 cm²/V·sec), respectively. The luminance properties and the EL efficiency were also investigated and shown a 300 W highest point of plasma power with 84 cd/m² and 0.924 lm/W. The film properties were found responsible for producing and improving the performance of IZO/PET substrate, suitable for displaying the devices.

中文翻译：

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使用氧等离子体处理在 PET 基板上涂覆 IZO 的高性能电致发光器件

使用射频 (RF) 磁控溅射技术和电致发光 (EL) 设备，将氧化铟锌 (IZO) 薄膜沉积在聚对苯二甲酸乙二醇酯 (PET) 基板上，等离子体功率从 100 W 到 300 W 不等。使用等离子体增强化学气相沉积 (PECVD) 系统，用氧等离子体功率处理由此工艺获得的 IZO 薄膜。在这种处理后，观察并报告了 IZO 薄膜的微观结构、电学和光学性能。结果表明 IZO/PET 薄膜是在最低电阻率下制造的（)，而光学表征显示在可见光区的最大透射率为 95%，具有光滑的形态和良好的晶体结构，受 300 W 等离子体功率和最佳载流子浓度的影响（)和霍尔迁移率 (42.12 cm ² /V·sec)，分别。还研究了亮度特性和 EL 效率，并显示了 300 W 的等离子体功率最高点，84 cd/m ²和 0.924 lm/W。发现薄膜特性负责生产和改进 IZO/PET 基板的性能，适用于显示设备。