The purpose of this paper is to investigate electrical properties of eutectic In8Sb8Te84 and In10Sb51Te39 as made thin films to evaluate their potential for non-volatile phase-change memories, once the thermal measurements are very optimistic.,The films were deposited by pulse laser deposition technique. By using a very simple home-made cell, transversal current-voltage curves films were measured involving both voltage controlled-pulses generator and current controlled-pulses generator, employing different pulse shapes: triangular and sine shaped.,The memory effect, characteristic of a typical phase-change memory material, was observed in both materials under research. For higher tellurium content in the film, lower is the value of threshold voltage.,Further studies on endurance, scaling and SET/RESET operations are needed.,The values of the key parameters, threshold voltage and hold voltage are comparable with those of Ge2Sb2Te5, GeTe and Sb2Te being considered to date as the main compounds for PCM devices.,The conduction mechanism in the amorphous regime is agreed with Poole–Frenkel effect in deep traps.

中文翻译：

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用于相变存储器件的共晶 In-Sb-Te 薄膜的电流-电压曲线

本文的目的是研究共晶 In8Sb8Te84 和 In10Sb51Te39 制成的薄膜的电性能，以评估它们在非易失性相变存储器方面的潜力，一旦热测量非常乐观。通过脉冲激光沉积技术沉积薄膜. 通过使用一个非常简单的自制电池，测量了横向电流 - 电压曲线薄膜，包括电压控制脉冲发生器和电流控制脉冲发生器，采用不同的脉冲形状：三角形和正弦形。,记忆效应，特性在研究中的两种材料中都观察到了典型的相变存储材料。对于薄膜中较高的碲含量，阈值电压值较低。需要进一步研究耐久性、缩放和 SET/RESET 操作。，