The purpose of this paper was the development of a model enabling precise determination of phosphorus concentration profile in the emitter layer of a silicon solar cell on the basis of diffusion doping process duration and temperature. Fick’s second law, which is fundamental for describing the diffusion process, was assumed as the basis for the model.,To establish a theoretical model of the process of phosphorus diffusion in silicon, real concentration profiles measured using the secondary ion mass spectrometry (SIMS) method were used. Samples with the phosphorus dopant source applied onto monocrystalline silicon surface were placed in the heat zone of the open quartz tube furnace, where the diffusion process took place in the temperature of 880°C-940°C. The measured real concentration profiles of these samples became template profiles for the model in development.,The model was developed based on phenomena described in the literature, such as the influence of the electric field of dopant ionized atoms and the influence of dopant atom concentration nearing the maximum concentration on the value of diffusion coefficient. It was proposed to divide the diffusion area into low and high dopant concentration region.,A model has been established which enabled obtaining a high level of consistency between the phosphorus concentration profile developed theoretically and the real profile measured using the SIMS method. A coefficient of diffusion of phosphorus in silicon dependent on dopant concentration was calculated. Additionally, a function describing the boundary between the low and high dopant concentration regions was determined.

中文翻译：

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硅中高掺杂太阳能电池发射层的磷扩散模型

本文的目的是开发一种模型，能够根据扩散掺杂工艺持续时间和温度精确确定硅太阳能电池发射极层中的磷浓度分布。菲克第二定律是描述扩散过程的基础，被假定为模型的基础。为了建立硅中磷扩散过程的理论模型，使用二次离子质谱法 (SIMS) 测量的真实浓度分布方法被使用。将磷掺杂剂源施加到单晶硅表面的样品放置在开放式石英管式炉的加热区，在880°C-940°C的温度下进行扩散过程。这些样品测得的真实浓度分布成为开发模型的模板分布。模型是根据文献中描述的现象开发的，例如掺杂离子化原子电场的影响和掺杂原子浓度接近的影响。扩散系数值上的最大浓度。建议将扩散区域划分为低掺杂剂浓度区和高掺杂剂浓度区。已经建立了一个模型，该模型能够在理论上开发的磷浓度分布与使用 SIMS 方法测量的实际分布之间获得高度的一致性。计算了取决于掺杂剂浓度的磷在硅中的扩散系数。此外，