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Scintillation Properties of New LuScSiO5 Crystals
Bulletin of the Lebedev Physics Institute ( IF 0.6 ) Pub Date : 2021-06-11 , DOI: 10.3103/s1068335621040035
M. V. Belov , Yu. D. Zavartsev , M. V. Zavertyaev , A. I. Zagumennyi , V. A. Kozlov , S. A. Kutovoi , N. V. Pestovskii , S. Yu. Savinov

Abstract

New LuScSiO5 crystals with intrinsic luminescence are grown by the Czochralski method. Pulsed cathodoluminescence spectra of new scintillators and their scintillation decay times are studied for the first time. Using 662-keV γ-rays from the 137Cs source, amplitude distributions of the number of luminescence counts (so-called photopeaks) are measured for new crystals. It is shown that the light yield of LuScSiO5 crystals is 13 500 photons/MeV.



中文翻译:

新型 LuScSiO5 晶体的闪烁特性

摘要

具有本征发光的新 LuScSiO 5晶体通过直拉法生长。首次研究了新型闪烁体的脉冲阴极发光光谱及其闪烁衰减时间。使用来自137 Cs 源的662 keV γ 射线,测量新晶体的发光计数(所谓的光峰)数量的幅度分布。结果表明,LuScSiO 5晶体的光产额为13 500 photons/MeV。

更新日期:2021-06-11
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