Recently, solution-processable polymeric semiconductors have been applied in various optoelectronic devices. To improve the surface properties of polymeric films, ultraviolet–ozone (UV–O₃) treatment is commonly used. However, the electronic structures of polymeric films altered by UV–O₃ treatment are not sufficiently understood. In this study, we investigated the electronic structures of poly(3-hexylthiophene-2,5-diyl) (P3HT) films with various UV–O₃ treatment times. During UV–O₃ treatment, significant oxidation occurred on both C and S atoms, bleaching the films. The degree of oxidation was higher than that observed in the UV-treated P3HT films without O₃ discussed in the literature. As a result, more C-based compounds were generated. Interestingly, the degree of oxidation with an increase in UV–O₃ treatment time was approximately the same between annealed and unannealed P3HT films. This result can be attributed to inherent film crystallinity based on the high regioregularity of P3HT.

最近，可溶液加工的聚合物半导体已应用于各种光电器件中。为了改善聚合物薄膜的表面性能，通常使用紫外线-臭氧 (UV-O ₃ ) 处理。然而，通过UV-O ₃处理改变的聚合物薄膜的电子结构还没有被充分了解。在这项研究中，我们研究了不同 UV-O ₃处理时间的聚（3-己基噻吩-2,5-二基）（P3HT）薄膜的电子结构。在 UV-O ₃处理过程中，C 和 S 原子都发生了显着的氧化，使薄膜漂白。氧化程度高于在没有 O _{3 的}情况下经过紫外线处理的 P3HT 薄膜中观察到的氧化程度文献中讨论过。结果，产生了更多的基于碳的化合物。有趣的是，随着 UV-O ₃处理时间的增加，退火和未退火 P3HT 薄膜的氧化程度大致相同。该结果可归因于基于 P3HT 的高区域规整性的固有薄膜结晶度。