The temperature dependences (or shifts) of spectral lines ⁴I_13/2→⁴I_15/2 in GaAs: Er³⁺ and v₅→v₁ in Y₃Al₅O₁₂:Yb³⁺ crystals are studied by using an approximate processing based on a full expression. This expression contains both the static effect owing to lattice thermal expansion and the dynamic effect coming from electron-phonon interaction. The static effect is evaluated from the pressure shift of spectral line position. The studies manifest that for both the pressure and temperature shifts of a spectral line, even if one shift is zero (e.g., the zero pressure shift in GaAs: Er³⁺ and zero temperature shift in Y₃Al₅O₁₂:Yb³⁺), the electron-phonon coupling parameter (charactering the dynamic effect) can be obtained from another shift. The obtained magnitudes of electron-phonon coupling parameters for 4fⁿ ions Er³⁺ in GaAs and Yb³⁺ in Y₃Al₅O₁₂ in order of magnitude are close to those of other 4fⁿ ions in crystals and hence are reasonable.

GaAs中谱线⁴ I _13/2 → ⁴ I _15/2的温度依赖性（或位移）：Er ³⁺和v ₅ → v ₁在 Y ₃ Al ₅ O ₁₂ :Yb ³⁺通过使用基于完整表达式的近似处理来研究晶体。该表达式包含由于晶格热膨胀引起的静态效应和来自电子-声子相互作用的动态效应。静态效应是从谱线位置的压力位移来评估的。研究表明，对于谱线的压力和温度偏移，即使一个偏移为零（例如，GaAs: Er ^{3+ 中}的零压力偏移和 Y ₃ Al ₅ O ₁₂ :Yb ^{3+ 中的}零温度偏移)，电子-声子耦合参数（表征动态效应）可以从另一个位移中获得。4f ⁿ的电子-声子耦合参数的大小GaAs中的离子Er ³⁺和Y ₃ Al ₅ O ₁₂中的Yb ³⁺在数量级上与晶体中其他4f ⁿ离子的数量级接近，因此是合理的。