Producing stable semiconducting thin films with low band gap energy by a viable technique is challenging for solar energy harvesting. Herein, Bi-doped Sb₂S₃ thin films have been deposited on glass substrates by chemical bath deposition (CBD) technique followed by annealing at 400 °C. X-ray diffraction (XRD) patterns confirmed the orthorhombic phase of Sb₂S₃ and successful incorporation of Bi⁺³ in the host lattice. Raman spectroscopy revealed the characteristic vibrational modes of Sb₂S₃. Surface of films became smoother and compact with increasing Bi contents. Samples showed wide absorption range in the visible region. Band gap energy (E_g) values were estimated using Tauc's relation and a blue shift in the absorption edge was observed with addition of Bi, thus E_g increased from 1.58 to 1.71 eV. Higher values of absorption coefficient and absorption edge in the visible region suggest that the prepared Sb₂S₃ thin films can be a right choice of an absorber layer.

通过可行的技术生产具有低带隙能量的稳定半导体薄膜对于太阳能收集具有挑战性。在此，Bi 掺杂的 Sb ₂ S ₃薄膜已通过化学浴沉积 (CBD) 技术沉积在玻璃基板上，然后在 400 °C 下退火。X 射线衍射 (XRD) 图案证实了 Sb ₂ S ₃的正交相和 Bi ⁺³在主晶格中的成功结合。拉曼光谱揭示了 Sb ₂ S ₃的特征振动模式。随着Bi含量的增加，薄膜表面变得更加光滑和致密。样品在可见光区显示出较宽的吸收范围。带隙能量 (E _g) 值是使用 Tauc 关系估计的，并且在添加 Bi 时观察到吸收边缘的蓝移，因此 E _g从 1.58 eV 增加到 1.71 eV。较高的可见光区吸收系数和吸收边值表明制备的 Sb ₂ S ₃薄膜可以作为吸收层的正确选择。