Purpose

To use the 4H-SiC material in integrated circuits for high temperature application, an accurate and simple circuit model of n-channel planar 4H-SiC MOSFET is required.

Design/methodology/approach

In this paper, a SPICE model of n-channel planar 4H-SiC MOSFET was built based on the device simulation results and measurement results. Firstly, a device model was simulated with Sentaurus TCAD, with measured parameters from fabricated planar 4H-SiC MOSFET previously. Then the device simulation results were analyzed and parameters for SPICE models were extracted. With these parameters, an accurate SPICE model was built and simulated.

Findings

The SPICE model exhibits the same performance as the measured results with different environment temperatures. The simulation results indicate that the maximum fitting error is 0.22 mA (7.33% approximately) at 200 °C. A common-source amplifier with this model is also simulated and the simulated gain is stable at different environment temperatures.

Originality/value

This paper provides a reliable modeling method for n-Channel Planar 4H-SiC MOSFET and reference value for the design of 4H-SiC high temperature integrated circuit.

中文翻译：

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基于n沟道平面4H-SiC MOSFET的高温模型研究

目的

要在高温应用的集成电路中使用 4H-SiC 材料，需要一个准确、简单的 n 沟道平面 4H-SiC MOSFET 电路模型。

设计/方法/途径

本文基于器件仿真结果和测量结果建立了n沟道平面4H-SiC MOSFET的SPICE模型。首先，使用 Sentaurus TCAD 模拟器件模型，使用之前制造的平面 4H-SiC MOSFET 的测量参数。然后分析器件仿真结果并提取 SPICE 模型的参数。利用这些参数，建立并仿真了一个准确的 SPICE 模型。

发现

SPICE 模型表现出与不同环境温度下的测量结果相同的性能。仿真结果表明，在 200 °C 时，最大拟合误差为 0.22 mA（约为 7.33%）。还对采用该模型的共源放大器进行了仿真，仿真增益在不同环境温度下均稳定。

原创性/价值

本文为n沟道平面4H-SiC MOSFET提供了一种可靠的建模方法，为4H-SiC高温集成电路的设计提供了参考价值。