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A comprehensive analysis of recombination and resistive losses in silicon solar cells induced by co-firing process
Surfaces and Interfaces ( IF 5.7 ) Pub Date : 2021-06-11 , DOI: 10.1016/j.surfin.2021.101260
Ashok Kumar Sharma , Suchismita Mitra , Sreejith KP , Durga Prasad Khatri , Almouzzam Khan , Anil Kottantharayil , Hemanta Ghosh

In this paper, we critically assess and present characterization methods to observe the impact of co-firing conditions initially on global parameters and subsequently, on local parameters of solar cells. Two different schemes, namely Scheme-A and Scheme-B, where the former is a closed and static system and the latter is an open and dynamic system are used to achieve two different co-firing conditions. Solar cells co-fired with these schemes are used in this study for investigating both global as well as the local performance parameters, majorly responsible for the losses in solar cells. In order to investigate the lateral variations of the diode parameters contributing to the loss mechanisms, combination of spatially resolved measurements have been carried out including light beam-induced current, photoluminescence and dark lock-in thermography. The proposed set of characterizations and methodology qualitatively compare the local two diode model parameters of each pixel in the spatially resolved images of a solar cell, responsible for the losses in all three performance parameters; open circuit voltage, short circuit current density and fill factor. The analysis reveals that even optimum firing conditions in two different schemes affect the surfaces in different ways where recombination and resistive losses become major contributors towards the power losses, primarily reverse saturation current density for first diode J01 and series resistance Rs. The characterization methods suggested are expected to become more significant during co-firing of advanced solar cell structures like passivated emitter and rear contact (PERC) solar cells where surface modifications are done to improve the solar cell output parameters.



中文翻译:

硅太阳能电池共烧复合及电阻损失综合分析

在本文中,我们批判性地评估并提出了表征方法,以观察共烧条件最初对全局参数的影响,随后对太阳能电池的局部参数的影响。两种不同的方案,即方案-A和方案-B,前者是一个封闭的静态系统,后者是一个开放的动态系统,用于实现两种不同的共烧条件。本研究中使用与这些方案共烧的太阳能电池来研究全局和局部性能参数,这些参数是造成太阳能电池损耗的主要原因。为了研究导致损耗机制的二极管参数的横向变化,已经进行了空间分辨测量的组合,包括光束感应电流、光致发光和暗锁定热成像。提出的一组表征和方法定性地比较了太阳能电池空间分辨图像中每个像素的局部两个二极管模型参数,负责所有三个性能参数的损失;开路电压、短路电流密度和填充因子。分析表明,即使是两种不同方案中的最佳点火条件也会以不同方式影响表面,其中复合和电阻损耗成为功率损耗的主要贡献者,主要是第一个二极管 J 的反向饱和电流密度 短路电流密度和填充因子。分析表明,即使是两种不同方案中的最佳点火条件也会以不同方式影响表面,其中复合和电阻损耗成为功率损耗的主要贡献者,主要是第一个二极管 J 的反向饱和电流密度 短路电流密度和填充因子。分析表明,即使是两种不同方案中的最佳点火条件也会以不同方式影响表面,其中复合和电阻损耗成为功率损耗的主要贡献者,主要是第一个二极管 J 的反向饱和电流密度01和串联电阻 R s。所建议的表征方法预计在先进太阳能电池结构(如钝化发射极和背面接触 (PERC) 太阳能电池)的共烧过程中变得更加重要,其中进行表面改性以改善太阳能电池输出参数。

更新日期:2021-06-23
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