Silicene has attracted the research interest due to its excellent electronic and spin properties. Furthermore, CrO2 half metal due to its high Curie temperature and high spin polarization is well suited for electrodes. In this work, we have simulated the magnetic tunnel junction device consisting of CrO2 electrodes and Silicene as a scattering region. The device is in a sub 10-nm regime, hence supports high integration density. The bias dependent spin transport properties (I-V characteristics and transmission spectrum) of the modeled device were calculated by Atomistic Tool Kit software, which uses density functional theory and non-equilibrium Greens function formalism. The device shows large tunnel magnetoresistance of 640%, depicting the potential application of the proposed device. The spin-dependent transmission spectrum, band structure, semi-conductor theory has been discussed to explain the origin of the spin-dependent transport characteristics. Moreover, an efficient method for MRAM (magnetic random access memory) read/write operation has been discussed. Furthermore, a NAND gate from a single modeled MTJ device has been realized, a half adder has also been realized from the modeled device to explore the potential of the modeled device for the implementation of complex digital functions.

中文翻译：

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亚10纳米硅烯磁性隧道结的实现及其在磁性随机存取存储器和数字逻辑中的应用


硅烯由于其优异的电子和自旋特性而引起了人们的研究兴趣。此外，CrO2半金属由于其高居里温度和高自旋极化而非常适合用作电极。在这项工作中，我们模拟了由 CrO2 电极和硅烯作为散射区域组成的磁隧道结器件。该器件采用亚 10 纳米工艺，因此支持高集成密度。模型器件的偏压相关自旋输运特性（IV 特性和透射谱）通过 Atomistic Tool Kit 软件计算，该软件使用密度泛函理论和非平衡格林函数形式。该器件显示出 640% 的大隧道磁阻，描绘了该器件的潜在应用。讨论了自旋相关的传输光谱、能带结构、半导体理论，以解释自旋相关的传输特性的起源。此外，还讨论了 MRAM（磁性随机存取存储器）读/写操作的有效方法。此外，还实现了来自单个建模 MTJ 器件的 NAND 门，还从建模器件实现了半加法器，以探索建模器件实现复杂数字功能的潜力。