N-channel thin film transistors (TFTs) fabricated with hydrogenated low temperature polycrystalline silicon (LTPS) were exposed to ultraviolet (UV) radiation to a cumulative dose up to 16 J/cm2. The effect of radiation on the electrical characteristics of the devices was monitored after the irradiation steps and in a prolonged period after irradiation. The main monitoring parameter was the threshold voltage ( V th) which was found to have exponentially linear dependence on irradiation dose. This, together with obtained low fading, suggests that hydrogenated n-channel low temperature polycrystalline silicon TFTs have potential as UV radiation dosimeters. In addition, the physical mechanisms of the UV induced electrical degradation were analyzed in terms of the radiation generated traps at poly-Si grain boundary and poly-Si and gate oxide insulator (poly-Si/SiO2) interface.

中文翻译：

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作为紫外线剂量计的氢化 n 沟道低温多晶硅 TFT


使用氢化低温多晶硅 (LTPS) 制造的 N 沟道薄膜晶体管 (TFT) 暴露在累积剂量高达 16 J/cm2 的紫外线 (UV) 辐射下。在辐照步骤之后以及辐照后的较长时间内监测辐射对器件电特性的影响。主要监测参数是阈值电压（V th），发现它与辐照剂量呈指数线性关系。这与所获得的低衰落一起表明氢化 n 沟道低温多晶硅 TFT 具有作为紫外线辐射剂量计的潜力。此外，还根据多晶硅晶界和多晶硅与栅极氧化物绝缘体（多晶硅/SiO2）界面处辐射产生的陷阱，分析了紫外线引起的电退化的物理机制。