In this work, the influence of the acceptor-type trap on the threshold voltage and short-channel effect is analyzed and modeled for the short-channel GaN MOS-HEMT. Particularly, the analysis and modeling are carried out with the dependences of the traps’ ionization condition on the gate voltage and drain voltage considered. From the calculated results based on the proposed threshold voltage model, it is found that both the interface acceptor-type trap and buffer acceptor-type trap play a vital role in the threshold voltage reduction for the short-channel AlGaN/GaN MOS-HEMT, due to the acceptor-type trap’s detrapping effect induced by the drain voltage. The calculated results are well supported by the numerical simulation, which verified the correctness and accuracy of the presented model.

中文翻译：

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受体型陷阱对短沟道 GaN MOS-HEMT 阈值电压的影响

在这项工作中，受主型陷阱对阈值电压和短沟道效应的影响针对短沟道 GaN MOS-HEMT 进行了分析和建模。特别地，分析和建模是在考虑陷阱的电离条件对栅极电压和漏极电压的依赖性的情况下进行的。根据基于所提出的阈值电压模型的计算结果，发现界面受体型陷阱和缓冲受体型陷阱对短沟道 AlGaN/GaN MOS-HEMT 的阈值电压降低起着至关重要的作用，由于漏极电压引起的受体型陷阱的去陷阱效应。数值模拟结果很好地支持了计算结果，验证了所提出模型的正确性和准确性。