In this work, the influence of the acceptor-type trap on the threshold voltage and short-channel effect is analyzed and modeled for the short-channel GaN MOS-HEMT. Particularly, the analysis and modeling are carried out with the dependences of the traps’ ionization condition on the gate voltage and drain voltage considered. From the calculated results based on the proposed threshold voltage model, it is found that both the interface acceptor-type trap and buffer acceptor-type trap play a vital role in the threshold voltage reduction for the short-channel AlGaN/GaN MOS-HEMT, due to the acceptor-type trap’s detrapping effect induced by the drain voltage. The calculated results are well supported by the numerical simulation, which verified the correctness and accuracy of the presented model.

中文翻译：

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受主型陷阱对短沟道GaN MOS-HEMT阈值电压的影响


在这项工作中，对短沟道GaN MOS-HEMT 的受主型陷阱对阈值电压和短沟道效应的影响进行了分析和建模。特别地，在考虑陷阱电离条件对栅极电压和漏极电压的依赖性的情况下进行分析和建模。根据所提出的阈值电压模型的计算结果发现，界面受主型陷阱和缓冲受主型陷阱对于短沟道AlGaN/GaN MOS-HEMT的阈值电压降低都起着至关重要的作用，由于漏极电压引起的受主型陷阱的去陷阱效应。数值模拟很好地支持了计算结果，验证了模型的正确性和准确性。