This paper presents a physics-based modeling framework for the analysis and transient simulation of circuits containing Spin-Transfer Torque (STT) Magnetic Tunnel Junction (MTJ) devices. The framework provides the tools to analyze the stochastic behavior of MTJs and to generate Verilog-A compact models for their simulation in large VLSI designs, addressing the need for an industry-ready model accounting for real-world reliability and scalability requirements. Device dynamics are described by the Landau-Lifshitz-Gilbert-Slonczewsky (s-LLGS ) stochastic magnetization considering Voltage-Controlled Magnetic Anisotropy (VCMA) and the non-negligible statistical effects caused by thermal noise. Model behavior is validated against the OOMMF magnetic simulator and its performance is characterized on a 1-Mb 28 nm Magnetoresistive-RAM (MRAM) memory product.

中文翻译：

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用于可扩展 MTJ 仿真的紧凑模型

本文提出了一种基于物理的建模框架，用于分析和瞬态仿真包含自旋转移扭矩 (STT) 磁性隧道结 (MTJ) 器件的电路。该框架提供了用于分析 MTJ 的随机行为并为它们在大型 VLSI 设计中的仿真生成 Verilog-A 紧凑模型的工具，满足了对满足现实世界可靠性和可扩展性要求的行业就绪模型的需求。器件动力学由 Landau-Lifshitz-Gilbert-Slonczewsky (s-LLGS) 随机磁化描述，考虑到压控磁各向异性 (VCMA) 和由热噪声引起的不可忽略的统计效应。模型行为针对 OOMMF 磁模拟器进行了验证，其性能在 1 Mb 28 nm 磁阻 RAM (MRAM) 存储器产品上进行了表征。