In this paper, for the first time, we apply the ultra-low-power (ULP) diode concept with Schottky Barrier (SB) transistors and analyze their performance in comparison to standard CMOS, using calibrated TCAD mixed-mode simulations. The negative impedance characteristics obtained in reverse mode with SB devices are shown to offer more stable current characteristics compared to CMOS, especially as a function of temperature. The origin of this behavior manifests itself in the fact that carriers tunneling through the barrier by field emission and carriers overcoming the barrier by thermionic emission both contribute to the total device current. This enables superior current performance over temperature. This enables ultra-low-power memory application over a larger temperature range, or with a denser cell area.

在本文中，我们首次将超低功耗 (ULP) 二极管概念与肖特基势垒 (SB) 晶体管一起应用，并使用校准的 TCAD 混合模式模拟分析了它们与标准 CMOS 相比的性能。与 CMOS 相比，SB 器件在反向模式下获得的负阻抗特性显示出提供更稳定的电流特性，尤其是作为温度的函数。这种行为的根源在于这样一个事实，即载流子通过场发射隧穿势垒和载流子通过热电子发射克服势垒都对总器件电流有贡献。这实现了在温度范围内的卓越电流性能。这可以在更大的温度范围内或在更密集的单元区域内实现超低功耗存储器应用。