This paper reports on the study of inverted metal-oxide semiconductor (MOS) structures formed through mechanical exfoliation of MoS₂ flakes onto Al₂O₃ or SiO₂ layers grown on degenerately doped p type silicon substrates. Using Au/Ni metal top contacts, multi-frequency capacitance and conductance characterisation were performed to investigate electrically active defects in the MoS₂/oxide structures. This data has been paired with physics-based ac simulations which indicate close to ideal interfacial properties.

中文翻译：

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研究 MoS ₂ /氧化物/Si 系统中的界面态和氧化物陷阱

本文报告了对通过将 MoS ₂薄片机械剥离到在退化掺杂的p型硅衬底上生长的Al ₂ O ₃或 SiO ₂层上形成的倒置金属氧化物半导体 (MOS) 结构的研究。使用 Au/Ni 金属顶部触点，进行多频电容和电导表征以研究 MoS ₂ /氧化物结构中的电活性缺陷。该数据已与基于物理的交流模拟配对，表明接近理想的界面特性。