Indium sulfide (In₂S₃) is a material extensively used as an alternative buffer layer to that of cadmium sulphide (CdS) for thin film photovoltaic applications. In this work, In₂S₃ thin films were obtained over SiO₂ glass with various substrate temperatures (Ts) using the vacuum thermal evaporation method. The effect of Ts which varies from 25 °C to 300 °C on structural, optical and morphological homestead are reported and discussed here. Our deposited In₂S₃ films are typified via X-ray diffraction (XRD), Raman spectroscopy, atomic force microscopy (AFM) and UV–Vis–NIR spectroscopy. XRD analysis reveals the amorphous nature of all samples. AFM graphics reveals that the deposited layers are smooth along relatively high surface roughness. The UV–Vis–NIR spectra show a high transmittance for all samples ranging from 75% to 90%, over the region extending from the UV–Vis to the near-infrared. The evaluated optical band gap energy showed a decrease from 2.60 eV to 2.12 eV with increasing Ts, which might be attributed to the presence of high concentration of defects, in the compound band structure. These experimental data were confirmed by theoretical predictions obtained by transfer matrix method (TMM) simulations.

硫化铟 (In ₂ S ₃ ) 是一种广泛用作薄膜光伏应用中硫化镉 (CdS) 缓冲层的替代材料。在这项工作中，使用真空热蒸发方法在不同衬底温度 (Ts) 的SiO ₂玻璃上获得了In ₂ S ₃薄膜。此处报告和讨论了从 25°C 到 300°C 变化的Ts对结构、光学和形态家园的影响。我们的存款 在₂ S ₃薄膜通过 X 射线衍射 (XRD)、拉曼光谱、原子力显微镜 (AFM) 和 UV-Vis-NIR 光谱表征。XRD 分析揭示了所有样品的无定形性质。AFM 图形显示沉积层沿相对较高的表面粗糙度是光滑的。UV-Vis-NIR 光谱显示所有样品的高透光率范围为 75% 到 90%，覆盖从 UV-Vis 到近红外的区域。所评估的光学带隙能量随着Ts的增加从 2.60 eV 降低到 2.12 eV ，这可能是由于复合带结构中存在高浓度缺陷。这些实验数据通过传递矩阵法 (TMM) 模拟获得的理论预测得到证实。