The letter reports that the impedance spectroscopy method has been performed to acquire impeccable results on the ac electric conductivity (σ_ac), dielectric (ε′ and ε′′) and electric modulus (M' and M'') components of the Al/Al₂O₃/p-Si type MOS capacitor. The relevant parameters are defined with C-V-f and G/ω-V-f data between 1 kHz and 5 MHz and ± 3 V at room temperature. Both parts of dielectric constants are decreasing at high frequencies to prevent the interface dipoles from gaining enough time to return to the alternative area. Depending on the restructuring and reorganization of surface states (N_ss) in the alternative field, tanδ decreases at higher frequencies. The M' values reach maximum by frequency increment in the depletion region, while M'' values shift to the forward biases depending on a certain density distribution of N_ss. The σ_ac values increase with increasing frequency in the accumulation region depending on series resistance. Considering polarization processes, surface conditions (N_ss) and Al₂O₃ interlayer, frequency and biases are extremely effective and dependent on the dielectric specifications, electrical modulus and conductivity.

这封信报告说，已经进行了阻抗谱方法，以在 Al/的交流电导率 (σ _ac )、介电 (ε' 和 ε'') 和电模量 (M' 和 M'') 分量方面获得无可挑剔的结果。Al ₂ O ₃ /p-Si型MOS电容。相关参数定义为室温下 1 kHz 至 5 MHz 和 ± 3 V 之间的 CVf 和 G/ω-Vf 数据。介电常数的两个部分在高频下都在下降，以防止界面偶极子获得足够的时间返回到替代区域。取决于表面态的重组和重组 (N _ss) 在替代场中，tanδ 在较高频率下减小。M' 值通过耗尽区中的频率增量达到最大值，而 M'' 值根据 N _ss的特定密度分布转移到正向偏置。σ _ac值随着累积区域中频率的增加而增加，这取决于串联电阻。考虑到极化过程、表面条件 (N _ss ) 和 Al ₂ O ₃夹层、频率和偏置非常有效，并且取决于介电规格、电模量和电导率。