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Optimized response of the AlGaN/GaN heterostructure with asymmetric gratings at oblique incidence in the terahertz regime
Journal of the Optical Society of America A ( IF 1.4 ) Pub Date : 2021-06-09 , DOI: 10.1364/josaa.425358
Lei Cao 1 , Huiting Xia 1 , Shanshan Jia 1 , Zhengya Yin 1
Affiliation  

The performance of terahertz (THz) detectors based on two-dimensional electron gas (2DEG) with the aid of a subwavelength gratings coupler depends critically on the amplitude difference of an electric field with positive and negative scattering orders. An efficient method was proposed to enhance the current response of the AlGaN/GaN material in the frequency range from 0 to 5 THz under oblique incidence of THz radiation with asymmetric gratings, where the optimal incidence angle exists. The case of symmetric gratings was also studied for comparison. The results will be useful for the theoretical and experimental optimization of grating-assisted THz detectors without electrical bias.

中文翻译:

在太赫兹范围内斜入射时具有非对称光栅的 AlGaN/GaN 异质结构的优化响应

借助亚波长光栅耦合器,基于二维电子气 (2DEG) 的太赫兹 (THz) 探测器的性能关键取决于具有正负散射阶次的电场的幅度差。提出了一种有效的方法来增强 AlGaN/GaN 材料在 0 到 5 THz 频率范围内在具有不对称光栅的 THz 辐射斜入射下的电流响应,其中存在最佳入射角。为了比较,还研究了对称光栅的情况。结果将有助于无电偏置光栅辅助太赫兹探测器的理论和实验优化。
更新日期:2021-07-02
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