The charging effect seriously limits the quality of the pattern transfer from a mask onto the etched material in the plasma etching. This work investigated the effect of the pulse phase lag (sometimes called phase lag for short) of the dual-frequency pulsing between the bias power (2 MHz) and the source power (60 MHz) on the charging issue on the surface of two adjacent and asymmetrically-shaped mask holes based on a reliable modeling framework. This work first verified that various phase lags (0 to 180°) can result in different distributions of the electric-field (E-field) and the net charge density on the mask surface. Then next shows that the mask profile presents an increased deformation as the phase lag increases. The effect of the fluorocarbon passivation generated during the source pulse off-time was involved in the simulation of the profile evolution. In addition, the number of ions passing through the opening of these two mask holes varying with the phase lag was also examined, which shows an increasing trend with decreased pulse phase lag. These conclusions shed new light on the approach to reduce the mask damage and improve the high aspect ratio etching.

充电效应严重限制了等离子体蚀刻中从掩模到蚀刻材料的图案转移质量。这项工作研究了偏置功率（2 MHz）和源功率（60 MHz）之间的双频脉冲的脉冲相位滞后（有时简称为相位滞后）对两个相邻表面充电问题的影响。和基于可靠建模框架的不对称形状的掩膜孔。这项工作首先验证了各种相位滞后（0 到 180°）会导致电场的不同分布（E-field) 和掩模表面的净电荷密度。然后接下来表明，随着相位滞后的增加，掩模轮廓呈现增加的变形。在源脉冲关闭时间期间产生的碳氟化合物钝化的影响参与了轮廓演变的模拟。此外，还研究了通过这两个掩模孔开口的离子数量随相位滞后而变化，随着脉冲相位滞后的减小，离子数量呈增加趋势。这些结论为减少掩模损伤和改善高深宽比蚀刻的方法提供了新的思路。