We have fabricated and investigated CTSe:Ge bi-layer devices by modulus spectroscopy combined with impedance spectroscopy to understand the electrical properties of hetero- and back-contact junctions. The equivalent circuit model is developed to decouple the properties of each junction at different frequency ranges. Modeling and numerical simulations with the in-house MATLAB modeling suites connected to external simulators, such as Sentaurus TCAD and LEVM/LEVMW software are conducted to estimate the impact of each junction component to modulus and impedance spectroscopy with a parallel equivalent circuit combination of resistance and capacitance components. The fabricated devices show doping concentration of 6.4 10¹⁵/cm³, and the conversion efficiency is 8.1% based on capacitance–voltage and current–voltage characterization. From the characterization and modeling, the built-in potential of the hetero-junction is estimated as 801 meV, which is ∼10% smaller than the ideal case from TCAD, 894 meV. Conversely, the built-in potential of the back contact junction is 428 meV. The total apparent built-in potential is estimated to be 373 meV from the Mott–Schottky equation.

我们通过模量谱结合阻抗谱制造和研究了 CTSe:Ge 双层器件，以了解异质结和背接触结的电气特性。开发等效电路模型以在不同频率范围内解耦每个结的属性。使用连接到外部模拟器（例如 Sentaurus TCAD 和 LEVM/LEVMW 软件）的内部 MATLAB 建模套件进行建模和数值模拟，以通过电阻和电阻的并联等效电路组合来估计每个结组件对模量和阻抗谱的影响。电容元件。制造的器件显示掺杂浓度为 6.4 10 ¹⁵ /cm ³，根据电容-电压和电流-电压特性，转换效率为 8.1%。根据表征和建模，异质结的内置电位估​​计为 801 meV，比 TCAD 的理想情况 894 meV 小 10%。相反，背接触结的内置电位为 428 meV。根据莫特-肖特基方程，总表观内建电位估计为 373 meV。