Recently, all-inorganic cesium lead bromide (CsPbBr₃) perovskite has attracted tremendous interest due to its promise for green light photonic and optoelectronic devices. The growth of high-quality planar micro-/nano-structures of CsPbBr₃ on the technologically important silicon substrate is an important issue for these applications, which has not yet been well explored. Herein we fabricate millimeter-scale single-crystalline CsPbBr₃ microplatelets (MPs) on SiO₂/Si substrate by chemical vapor deposition. A preferred growth direction is demonstrated with the [110] direction parallel to the flux direction of carrier gas. Strong green emission is observed at room temperature with superior photo-stability, long lifetime, and excitonic features. Furthermore, the room temperature whispering-gallery-mode lasing is achieved from the focused ion beam fabricated microdisks with the thresholds comparable to those of pristine square MPs. These results suggest the great potentials of CsPbBr₃ MPs for the Si-based photonic devices.

最近，全无机溴化铯铅 (CsPbBr ₃ ) 钙钛矿因其在绿光光子和光电器件方面的前景而引起了极大的兴趣。在技​​术上重要的硅衬底上生长高质量的 CsPbBr ₃平面微/纳米结构是这些应用的一个重要问题，尚未得到很好的探索。在此，我们在 SiO ₂上制造毫米级单晶 CsPbBr ₃微片 (MPs)/Si衬底通过化学气相沉积。优选的生长方向用平行于载气流动方向的[110]方向证明。在室温下观察到强烈的绿色发射，具有优异的光稳定性、长寿命和激子特征。此外，室温回音壁模式激光是通过聚焦离子束制造的微盘实现的，其阈值与原始方形 MP 的阈值相当。这些结果表明 CsPbBr ₃ MPs 在 Si 基光子器件中的巨大潜力。