From the viewpoint of interface quality within the gate stack, it is crucial to accurately evaluate the device performance of ferroelectric field-effect transistors (FeFETs). In this article, a measurement scheme composed of pulse configurations is designed to avoid dynamic changes in the threshold voltage of the FeFET during charge pumping (CP) measurements. Three types of control devices experiencing different levels of bias stress are prepared for investigations of the origins of device performance degradation. The frequency dependence of applied voltage levels to induce variations in CP current (I _CP) are suggested to result from charge-injection events into deteriorated interface trap sites. These behaviors were also verified by the pulsed current–voltage (I–V) method using high-frequency gate voltage (V _GS). The frequency dispersion of memory window (MW) variations and their V _GS-sweep polarity dependences well reflect the interfacial behavior related to the charge injection of the stressed devices. The trap/detrap times and locations of trapped charges are examined by the energy distribution of trap sites calculated from the obtained I _CP values. Thus, the MW obtained from the FeFET should be accurately analyzed to separate the charge-injection components from ferroelectric field effects by means of the proposed useful guidelines using the CP and pulsed I–V methods.

从栅极堆叠内的界面质量的角度来看，准确评估铁电场效应晶体管 (FeFET) 的器件性能至关重要。在本文中，设计了一种由脉冲配置组成的测量方案，以避免在电荷泵 (CP) 测量期间 FeFET 阈值电压的动态变化。准备了三种类型的控制设备经历不同程度的偏置应力，以研究设备性能下降的根源。所施加的电压水平的频率依赖性引起 CP 电流 ( I _CP ) 的变化被认为是由电荷注入事件导致的到恶化的界面陷阱位点。这些行为也通过脉冲电流 - 电压（I -V ) 使用高频栅极电压 ( V _GS ) 的方法。存储器窗口 (MW) 变化的频率色散及其V _{GS -}扫描极性相关性很好地反映了与受压器件的电荷注入相关的界面行为。通过从获得的I _CP值计算出的陷阱位点的能量分布来检查陷阱/去陷阱时间和陷阱电荷的位置。因此，应该准确地分析从 FeFET 获得的 MW，通过使用 CP 和脉冲I - V方法的建议的有用指南，将电荷注入分量与铁电场效应分开。