In this paper, the influence of doping barium titanate in the polyvinyl pyrrolidine polymer sandwiched between the metal-semiconductor on the conduction mechanism and the electrical properties of the formed diode has been examined. The barium titanate nanostructure is prepared by microwave assisted method. The TGD/DTA, x-ray diffraction pattern (XRD), Field Emission Scanning Electron Microscope (FE-SEM), Electron Dispersive x-ray (EDX) and UV-Vis spectroscopy analyses are performed in order to determine the calcination temperature, average crystalline size, surface morphology, purity specification, and optical properties of the prepared barium titanate nanostructure, respectively. The main electrical parameters such as the ideality factor (n), barrier height (BH), leakage current (I₀), shunt (R_sh) and series (R_s) resistances of the Al/PVP: BaTiO₃/p-Si (MPS) and Al/p-Si (MS) structures are calculated by Thermionic Emission (TE), Norde, and Cheung methods by measuring the I–V characteristics of the both diodes at 6 V and compared with each other. Moreover, the surface states density (N_ss) as a function of energy at forward bias and the current conduction mechanisms at forward and revers bias are investigated. The rectifying ratio of MPS diode is enhanced by reducing the n, R_s, N_ss, I₀ and by increasing shunt resistance (R_sh), BH due to presence of interfacial layer. Therefore, PVP: BaTiO₃ interlayer can be a suitable alternative replacement of intrinsic interlayer for utilization in the nanoscale electronic and optoelectronic devices and circuits.

本文研究了在夹在金属半导体之间的聚乙烯吡咯烷聚合物中掺杂钛酸钡对所形成二极管的导电机制和电性能的影响。采用微波辅助法制备钛酸钡纳米结构。进行 TGD/DTA、X 射线衍射图 (XRD)、场发射扫描电子显微镜 (FE-SEM)、电子色散 X 射线 (EDX) 和 UV-Vis 光谱分析以确定煅烧温度、平均值分别对制备的钛酸钡纳米结构的晶体尺寸、表面形貌、纯度规格和光学性能进行了分析。理想因子(n)、势垒高度(BH)、漏电流(I ₀ )、分流器(R _sh) 和Al/PVP 的串联 (R _s ) 电阻：BaTiO ₃ /p-Si (MPS) 和 Al/p-Si (MS) 结构通过热离子发射 (TE)、Norde 和 Cheung 方法通过测量两个二极管在 6 V 时的 I-V 特性并相互比较。此外，研究了作为正向偏压下能量函数的表面态密度 (N _ss ) 以及正向和反向偏压下的电流传导机制。MPS 二极管的整流比通过降低 n、R _s、N _ss、I ₀以及由于界面层的存在而增加分流电阻 (R _sh )、BH 来提高。因此，PVP：BaTiO ₃ 中间层可以是本征中间层的合适替代替代品，用于纳米级电子和光电器件和电路。