High-quality MAPbX ₃ (X = I, Br, Cl) single crystals with a desirable size were grown through an inverse temperature crystallization method. Systematically measurements of current–voltage (I–V) hysteresis show that the hysteresis is strongly dependent on the measuring protocol, including scan rate and light illumination condition, which reveals the competition of three main factors that influence the charge dynamics in different regimes, defect trap, MA⁺ dipoles rotation, and ion migration. In the dark, defect trapping is the dominant charge transport dynamics at low bias in the MAPbI₃, while the MA⁺ dipole rotation is significant in MAPbBr₃, and ion migration occurs in MAPbCl₃. However, as bias increases, MA⁺ dipole rotation plays a crucial role in the conductivity either in the dark or under light illumination. The time-dependent photoresponse exhibits different tendencies under various biases. The slow rising dynamics of photoresponse in MAPbX ₃ is attributed to the slow rotation of MA⁺ dipoles, while an immediate overshoot followed by a decay suggests significant ion migration contribution at high external bias. The results serve as comprehensive experimental support to understand the hysteresis behaviors and slow photoresponse in MAPbX ₃, particularly in MAPbCl₃, and provide a guide for future work in MAPbX ₃ based optoelectronic devices.

通过逆温结晶法生长出具有所需尺寸的高质量 MAPb X ₃ ( X = I, Br, Cl) 单晶。电流-电压 ( I – V ) 迟滞的系统测量表明迟滞强烈依赖于测量协议，包括扫描速率和光照条件，这揭示了影响不同状态下电荷动力学的三个主要因素的竞争，缺陷陷阱、MA ⁺偶极子旋转和离子迁移。在黑暗中，缺陷捕获是 MAPbI ₃中低偏压下的主要电荷传输动力学，而 MA ⁺偶极子旋转在 MAPbBr 中很重要₃，离子迁移发生在MAPbCl _{3 中}。然而，随着偏置的增加，MA ⁺偶极子旋转在黑暗或光照下对电导率起着至关重要的作用。随时间变化的光响应在各种偏差下表现出不同的趋势。MAPb X ₃中光响应的缓慢上升动力学归因于 MA ⁺偶极子的缓慢旋转，而立即过冲后衰减表明在高外部偏压下有显着的离子迁移贡献。结果为理解MAPb X _{3 中}的滞后行为和缓慢的光响应提供了全面的实验支持，特别是在MAPbCl _{3 中。}，并为基于MAPb X ₃的光电器件的未来工作提供指导。