Aluminium oxide (Al₂O₃) has been proposed as an alternative to thermal silicon dioxide (SiO₂) as field insulator and surface passivation for silicon detectors, where it could substitute p-stop/p-spray insulation implants between pixels due to its negative oxide charge, and enable capacitive coupling of segments by means of its higher dielectric constant. Al₂O₃ is commonly grown by atomic layer deposition (ALD), which allows the deposition of thin layers with excellent precision. In this work, we report the electrical characterization of single pad detectors (diodes) and MOS capacitors fabricated on magnetic Czochralski silicon substrates and using Al₂O₃ as field insulator. Devices are studied by capacitance-voltage, current-voltage, and transient current technique measurements. We evaluate the influence of the oxygen precursors in the ALD process, as well as the effect of gamma irradiation, on the properties of these devices. We observe that leakage currents in diodes before the onset of breakdown are low for all studied ALD processes. Charge collection as measured by transient current technique (TCT) is also independent of the choice of oxygen precursor. The Al₂O₃ films deposited with O₃ possess a higher negative oxide charge than films deposited by H₂O, However, in diodes a higher oxide charge is linked to earlier breakdown, as has been predicted by simulation studies. A combination of H₂and O₃ precursors results in a good compromise between the beneficial properties provided by the respective individual precursors.

氧化铝 (Al ₂ O ₃ ) 已被提议作为热二氧化硅 (SiO ₂ ) 的替代品，作为硅探测器的场绝缘体和表面钝化剂，它可以替代像素之间的 p-stop/p-spray 绝缘注入，因为它具有负氧化物电荷，并通过其较高的介电常数实现片段的电容耦合。Al ₂ O ₃通常通过原子层沉积 (ALD) 生长，它允许以极好的精度沉积薄层。_{在这项工作中，我们报告了使用 Al 2} O ₃在磁性 Czochralski 硅衬底上制造的单焊盘检测器（二极管）和 MOS 电容器的电气特性。作为场绝缘体。通过电容-电压、电流-电压和瞬态电流技术测量来研究器件。我们评估了 ALD 工艺中氧前体的影响，以及伽马辐照对这些器件性能的影响。我们观察到，对于所有研究的 ALD 工艺，在击穿开始之前二极管中的泄漏电流都很低。通过瞬态电流技术 (TCT) 测量的电荷收集也与氧前体的选择无关。_{用O 3}沉积的Al ₂ O ₃薄膜比用H ₂沉积的薄膜具有更高的负氧化物电荷O, 然而，正如模拟研究所预测的那样，在二极管中，较高的氧化物电荷与较早的击穿有关。H ₂和O ₃前体的组合导致由各自的单独前体提供的有益性质之间的良好折衷。