The relationship between ions irradiation and the induced microstructures (point defects, dislocations, clusters, etc.) could be better analyzed and explained by simulation. The mean field rate theory and cluster dynamics are used to simulate the effect of implanted Fe on the point defects concentration quantitatively. It is found that the depth distribution of point defect concentration is relatively gentle than that of damage calculated by SRIM software. Specifically, the damage rate and point defect concentration increase by 1.5 times and 0.6 times from depth of 120 nm to 825 nm, respectively. With the consideration of implanted Fe ions, which effectively act as interstitial atoms at the depth of high ion implantation rate, the vacancy concentration C _v decreases significantly after reaching the peak value, while the interstitial atom concentration C _i increases significantly after decline of the previous stage. At the peak depth of ion implantation, C _v dropped by 86%, and C _i increased by 6.2 times. Therefore, the implanted ions should be considered into the point defects concentration under high dose of heavy ion irradiation, which may help predict the concentration distribution of defect clusters, further analyzing the evolution behavior of solute precipitation.

通过模拟可以更好地分析和解释离子辐照与诱导的微观结构（点缺陷、位错、团簇等）之间的关系。使用平均场率理论和簇动力学来定量模拟注入Fe对点缺陷浓度的影响。发现点缺陷浓度的深度分布比SRIM软件计算的损伤深度分布相对平缓。具体而言，从深度 120 nm 到 825 nm，损伤率和点缺陷浓度分别增加了 1.5 倍和 0.6 倍。考虑到注入的 Fe 离子，在高离子注入率的深度有效地充当间隙原子，空位浓度C _v达到峰值后显着下降，而间隙原子浓度C _i在前一阶段下降后显着增加。在离子注入的峰值深度，C _v下降了 86%，C _i增加了 6.2 倍。因此，应将注入离子考虑到高剂量重离子辐照下的点缺陷浓度，这有助于预测缺陷簇的浓度分布，进一步分析溶质沉淀的演化行为。