A type of Si-based blocked impurity band photoelectric detector with a planar architecture is designed and demonstrated by a modified silicon semiconductor processing technique. In this route, multiple ion implantation is utilized to ensure the uniform distribution of the P elements in silicon, and rapid thermal annealing treatment is used to activate the P atoms and reduce damages caused by ion-implantation. The fabricated prototype device exhibits an excellent photoelectric response performance. With a direct current (DC) bias voltage of –2.3 V, the device detectivity to blackbody irradiation is as high as 5 10¹³cm⋅Hz^1/2/W, which corresponds to a device responsivity of nearly 4.6 A/W, showing their potential applications in infrared detection, infrared astrophysics, and extraterrestrial life science. In particular, the developed device preparation process is compatible with that for the CMOS-circuit, which greatly reduces the manufacturing cost.

通过改进的硅半导体加工技术，设计并演示了一种平面结构的硅基阻挡杂质带光电探测器。该路线采用多次离子注入保证P元素在硅中的均匀分布，并采用快速热退火处理激活P原子，减少离子注入造成的损伤。制造的原型器件表现出优异的光电响应性能。在 –2.3 V 的直流 (DC) 偏置电压下，设备对黑体辐照的检测率高达 5 10 ¹³ cm·Hz ^1/2/W，对应于近 4.6 A/W 的设备响应度，显示了它们在红外探测、红外天体物理学和地外生命科学中的潜在应用。特别是，所开发的器件制备工艺与CMOS电路的制备工艺兼容，大大降低了制造成本。