This paper proposes a method for the rapid detection of subsurface damage (SSD) of SiC using atmospheric inductivity coupled plasma. As a plasma etching method operated at ambient pressure with no bias voltage, this method does not introduce any new SSD to the substrate. Plasma diagnosis and simulation are used to optimize the detection operation. Assisted by an SiC cover, a taper can be etched on the substrate with a high material removal rate. Confocal laser scanning microscopy and scanning electron microscope are used to analyze the etching results, and scanning transmission electron microscope (STEM) is adopted to confirm the accuracy of this method. The STEM result also indicates that etching does not introduce any SSD, and the thoroughly etched surface is a perfectly single crystal. A rapid SSD screening ability is also demonstrated, showing that this method is a promising approach for the rapid detection of SSD.

本文提出了一种使用大气电感耦合等离子体快速检测 SiC 次表面损伤 (SSD) 的方法。作为一种在环境压力下没有偏置电压的等离子体蚀刻方法，该方法不会向基板引入任何新的 SSD。等离子体诊断和模拟用于优化检测操作。在 SiC 覆盖层的辅助下，可以以高材料去除率在基板上蚀刻锥形。采用共聚焦激光扫描显微镜和扫描电子显微镜对蚀刻结果进行分析，并采用扫描透射电子显微镜（STEM）来确认该方法的准确性。STEM 结果还表明蚀刻不会引入任何 SSD，并且完全蚀刻的表面是完美的单晶。还展示了快速 SSD 筛选能力，