We report the superconducting properties of the tungsten (W) nanowires fabricated using focussed ion beam (FIB) technique having different wire widths of ∼120 nm and ∼290 nm. The transport properties of these wires were measured down to a temperature of 20 mK in a dilution refrigerator. We observed hysteretic current- voltage characteristics (IVCs) as a function of temperature, wherein the extend of hysteresis (difference between switching current and re-trapping current) is larger at lower temperature and diminishes near to the transition temperature. The temperature dependence of the switching current and re-trapping current were analysed using conventional models and found out to be of reasonable agreement with the models invoked. The re-trapping current agrees well with the thermal model incorporating phonon contribution in the heat dissipation process along with the electronic contribution. The equilibrium electron temperature calculated using the heat dissipation models at the critical current of the wires agrees well with respect to the transition temperature of the wire having a larger width, while for the wire of lower width, it is slightly elevated. Based on the analysis, it is believed that heat dissipation primarily because of Joule heating is the cause of the hysteretic current voltage characteristics of the nanowires.

我们报告了使用聚焦离子束 (FIB) 技术制造的钨 (W) 纳米线的超导特性，该技术具有~120 nm 和~290 nm 的不同线宽。在稀释冰箱中，在低至 20 mK 的温度下测量这些电线的传输特性。我们观察到滞后电流-电压特性 (IVC) 作为温度的函数，其中滞后的范围（开关电流和重新捕获电流之间的差异）在较低温度下较大，并在接近转变温度时减小。使用传统模型分析了开关电流和重新俘获电流的温度依赖性，发现与所调用的模型具有合理的一致性。重新捕获电流与在散热过程中包含声子贡献以及电子贡献的热模型非常吻合。在导线临界电流下使用散热模型计算的平衡电子温度与较大宽度导线的转变温度吻合良好，而对于较小宽度导线，它略有升高。根据分析，认为主要由于焦耳热引起的散热是导致纳米线滞后电流电压特性的原因。在导线临界电流下使用散热模型计算的平衡电子温度与较大宽度导线的转变温度吻合良好，而对于较小宽度导线，它略有升高。根据分析，认为主要由于焦耳热引起的散热是导致纳米线滞后电流电压特性的原因。在导线临界电流下使用散热模型计算的平衡电子温度与较大宽度导线的转变温度吻合良好，而对于较小宽度导线，它略有升高。根据分析，认为主要由于焦耳热引起的散热是导致纳米线滞后电流电压特性的原因。