We present the superconducting (SC) property and high-robustness of structural stability of kagome CsV₃Sb₅ under in situ high pressures. For the initial SC-I phase, its T _c is quickly enhanced from 3.5 K to 7.6 K and then totally suppressed at P ∼ 10 GPa. With further increasing pressure, an SC-II phase emerges at P ∼ 15 GPa and persists up to 100 GPa. The T _c rapidly increases to the maximal value of 5.2 K at P = 53.6 GPa and slowly decreases to 4.7 K at P = 100 GPa. A two-dome-like variation of T _c in CsV₃Sb₅ is concluded here. The Raman measurements demonstrate that weakening of E _2g mode and strengthening of E _1g mode occur without phase transition in the SC-II phase, which is supported by the results of phonon spectra calculations. Electronic structure calculations reveal that exertion of pressure may bridge the gap of topological surface nontrivial states near E _F, i.e., disappearance of Z ₂ invariant. Meanwhile, the Fermi surface enlarges significantly, consistent with the increased carrier density. The findings here suggest that the change of electronic structure and strengthened electron-phonon coupling should be responsible for the pressure-induced reentrant SC.

_{我们展示了kagome CsV 3} Sb ₅在原位高压下的超导（SC）特性和结构稳定性的高稳健性。对于最初的 SC-I 阶段，其T _c从 3.5 K 迅速提高到 7.6 K，然后在P ∼ 10 GPa 时完全被抑制。随着压力的进一步增加，SC-II 相出现在P ~15 GPa 并持续到 100 GPa。T _c在P = 53.6 GPa时迅速增加到最大值 5.2 K，在P = 100 GPa时缓慢降低到 4.7 K。CsV ₃ Sb中T _c的两个圆顶状变化₅到此结束。拉曼测量表明，E _{2g模式的减弱和}E _1g模式的加强在 SC-II 相中没有相变，这得到了声子光谱计算结果的支持。电子结构计算表明，施加压力可以弥合E _F附近拓扑表面非平凡状态的间隙，即Z ₂不变量的消失。同时，费米面显着扩大，与增加的载流子密度一致。这里的研究结果表明，电子结构的变化和增强的电子 - 声子耦合应该是压力诱导的重入 SC 的原因。