The modulation of electrical properties of MoS₂ has attracted extensive research interest because of its potential applications in electronic and optoelectronic devices. Herein, interfacial charge transfer induced electronic property tuning of MoS₂ are investigated by in situ ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy measurements. A downward band-bending of MoS₂-related electronic states along with the decreasing work function, which are induced by the electron transfer from Cs overlayers to MoS₂, is observed after the functionalization of MoS₂ with Cs, leading to n-type doping. Meanwhile, when MoS₂ is modified with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F ₄-TCNQ), an upward band-bending of MoS₂-related electronic states along with the increasing work function is observed at the interfaces. This is attributed to the electron depletion within MoS₂ due to the strong electron withdrawing property of F ₄-TCNQ, indicating p-type doping of MoS₂. Our findings reveal that surface transfer doping is an effective approach for electronic property tuning of MoS₂ and paves the way to optimize its performance in electronic and optoelectronic devices.

_{MoS 2}的电学性质的调制因其在电子和光电器件中的潜在应用而引起了广泛的研究兴趣。在此，通过原位紫外光电子能谱和X射线光电子能谱测量研究了MoS ₂的界面电荷转移诱导的电子特性调节。_{在用 Cs 对 MoS 2}进行功能化后，观察到MoS ₂相关电子态的向下带弯曲以及降低的功函数，这是由从 Cs 覆盖层到 MoS ₂的电子转移引起的，导致 n 型掺杂. 同时，当 MoS ₂用 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane ( F _{4 -TCNQ) 改性，观察到 MoS 2}相关电子态的向上带弯曲以及功函数增加接口。这归因于由于F ₄ -TCNQ的强吸电子特性导致MoS _{2内的电子耗尽，表明MoS 2}的p型掺杂。我们的研究结果表明，表面转移掺杂是调节 MoS ₂电子特性的有效方法，并为优化其在电子和光电器件中的性能铺平了道路。