Atomically thin two-dimensional (2D) materials are the building bricks for next-generation electronics and optoelectronics, which demand plentiful functional properties in mechanics, transport, magnetism and photoresponse. For electronic devices, not only metals and high-performance semiconductors but also insulators and dielectric materials are highly desirable. Layered structures composed of 2D materials of different properties can be delicately designed as various useful heterojunction or homojunction devices, in which the designs on the same material (namely homojunction) are of special interest because preparation techniques can be greatly simplified and atomically seamless interfaces can be achieved. We demonstrate that the insulating pristine ZnPS₃, a ternary transition-metal phosphorus trichalcogenide, can be transformed into a highly conductive metal and an n-type semiconductor by intercalating Co and Cu atoms, respectively. The field-effect-transistor (FET) devices are prepared via an ultraviolet exposure lithography technique. The Co-ZnPS₃ device exhibits an electrical conductivity of 8 10⁴ S/m, which is comparable to the conductivity of graphene. The Cu-ZnPS₃ FET reveals a current ON/OFF ratio of 10⁵ and a mobility of 3 10⁻² cm²⋅V⁻¹⋅s⁻¹. The realization of an insulator, a typical semiconductor and a metallic state in the same 2D material provides an opportunity to fabricate n-metal homojunctions and other in-plane electronic functional devices.

原子级薄二维 (2D) 材料是下一代电子和光电子学的基石，它们需要在力学、传输、磁性和光响应方面具有丰富的功能特性。对于电子设备，不仅金属和高性能半导体，而且绝缘体和介电材料都是非常需要的。由不同性质的二维材料组成的层状结构可以精心设计为各种有用的异质结或同质结器件，其中在相同材料（即同质结）上的设计具有特别的意义，因为制备技术可以大大简化，并且可以实现原子级无缝接口达到。我们证明了绝缘的原始 ZnPS ₃，一种三元过渡金属磷三硫属化物，可以分别通过嵌入 Co 和 Cu 原子转化为高导电金属和 n 型半导体。场效应晶体管 (FET) 器件是通过紫外曝光光刻技术制备的。Co-ZnPS ₃器件的电导率为 8 10 ⁴ S/m，与石墨烯的电导率相当。Cu-ZnPS _{3 FET 显示出 10} ⁵的电流开/关比和 3 10 ^-2 cm ² ⋅V ^-1 ⋅s ^{-1的迁移率}. 在同一二维材料中实现绝缘体、典型半导体和金属态为制造 n 金属同质结和其他平面内电子功能器件提供了机会。