Tunable carrier density plays a key role in the investigation of novel transport properties in three-dimensional topological semimetals. We demonstrate that the carrier density, as well as the mobility, of Dirac semimetal Cd₃As₂ nanoplates can be effectively tuned via in situ thermal treatment at 350 K for one hour, resulting in non-monotonic evolution by virtue of the thermal cycling treatments. The upward shift of Fermi level relative to the Dirac nodes blurs the surface Fermi-arc states, accompanied by an anomalous phase shift in the oscillations of bulk states, due to a change in the topology of the electrons. Meanwhile, the oscillation peaks of bulk longitudinal magnetoresistivity shift at high fields, due to their coupling to the oscillations of the surface Fermi-arc states. Our work provides a thermal control mechanism for the manipulation of quantum states in Dirac semimetal Cd₃As₂ at high temperatures, via their carrier density.

可调谐载流子密度在研究三维拓扑半金属的新输运性质中起着关键作用。我们证明了 Dirac 半金属 Cd ₃ As ₂纳米板的载流子密度和迁移率可以通过原位有效地调节在 350 K 下热处理一小时，通过热循环处理导致非单调演化。由于电子拓扑结构的变化，费米能级相对于狄拉克节点的向上移动模糊了表面费米弧态，伴随着体态振荡的异常相移。同时，由于与表面费米弧态的振荡耦合，体纵向磁阻率的振荡峰在高场下发生偏移。我们的工作提供了一种热控制机制，通过其载流子密度在高温下操纵 Dirac 半金属 Cd ₃ As _{2中的量子态。}