AlN single crystal grown by physical vapor transport (PVT) using homogeneous seed is considered as the most promising approach to obtain high-quality AlN boule. In this work, the morphology of AlN single crystals grown under different modes (3D islands and single spiral center) were investigated. It is proved that, within an optimized thermal distribution chamber system, the surface temperature of AlN seed plays an important role in crystal growth, revealing a direct relationship between growth mode and growth condition. Notably, a high-quality AlN crystal, with (002) and (102) reflection peaks of 65 and 36 arcsec at full width at half maximum (FWHM), was obtained grown under a single spiral center mode. And on which, a high-quality Al _x Ga_{1– x} N epitaxial layer with high Al content (x = 0.54) was also obtained. The FWHMs of (002) and (102) reflection of Al _x Ga_{1– x} N were 202 and 496 arcsec, respectively, which shows superiority over their counterpart grown on SiC or a sapphire substrate.

使用均质种子通过物理气相传输 (PVT) 生长的 AlN 单晶被认为是获得高质量 AlN 晶锭的最有希望的方法。在这项工作中，研究了在不同模式（3D 岛和单螺旋中心）下生长的 AlN 单晶的形态。事实证明，在优化的热分布室系统内，AlN 晶种的表面温度对晶体生长起着重要作用，揭示了生长方式和生长条件之间的直接关系。值得注意的是，在单螺旋中心模式下获得了高质量的 AlN 晶体，其 (002) 和 (102) 反射峰在半高全宽 (FWHM) 处分别为 65 和 36 弧秒。并且在其上，一个高质量的 Al _x Ga _{1– x} 还获得了具有高Al含量（x = 0.54）的N外延层。Al _x Ga _{1– x} N 的 (002) 和 (102) 反射的 FWHM 分别为 202 和 496 弧秒，这表明其优于在 SiC 或蓝宝石衬底上生长的对应物。