Gallium nitride (GaN)-based high-electron mobility transistors (HEMTs) are widely used in high power and high frequency application fields, due to the outstanding physical and chemical properties of the GaN material. However, GaN HEMTs suffer from degradations and even failures during practical applications, making physical analyses of post-failure devices extremely significant for reliability improvements and further device optimizations. In this paper, common physical characterization techniques for post failure analyses are introduced, several failure mechanisms and corresponding failure phenomena are reviewed and summarized, and finally device optimization methods are discussed.

氮化镓 (GaN) 基高电子迁移率晶体管 (HEMT) 由于 GaN 材料优异的物理和化学性能而广泛应用于高功率和高频应用领域。然而，GaN HEMT 在实际应用中会出现性能下降甚至失效，因此对失效后器件的物理分析对于提高可靠性和进一步优化器件非常重要。本文介绍了失效后分析的常用物理表征技术，回顾和总结了几种失效机制和相应的失效现象，最后讨论了器件优化方法。