Efficient light generation and amplification has long been missing on the silicon platform due to its well-known indirect bandgap nature. Driven by the size, weight, power and cost (SWaP-C) requirements, the desire to fully realize integrated silicon electronic and photonic integrated circuits has greatly pushed the effort of realizing high performance on-chip lasers and amplifiers moving forward. Several approaches have been proposed and demonstrated to address this issue. In this paper, a brief overview of recent progress of the high-performance lasers and amplifiers on Si based on different technology is presented. Representative device demonstrations, including ultra-narrow linewidth III–V/Si lasers, fully integrated III–V/Si/Si₃N₄ lasers, high-channel count mode locked quantum dot (QD) lasers, and high gain QD amplifiers will be covered.

由于硅平台众所周知的间接带隙性质，长期以来一直缺少高效的光产生和放大。在尺寸、重量、功率和成本 (SWaP-C) 要求的驱动下，完全实现集成硅电子和光子集成电路的愿望极大地推动了实现高性能片上激光器和放大器的努力向前发展。已经提出并证明了几种方法来解决这个问题。本文简要概述了基于不同技术的硅基高性能激光器和放大器的最新进展。代表性器件演示，包括超窄线宽 III-V/Si 激光器、完全集成的 III-V/Si/Si ₃ N ₄将涵盖激光器、高通道数锁模量子点 (QD) 激光器和高增益 QD 放大器。