Hybrid integration of III–V and ferroelectric materials is being broadly adopted to enhance functionalities in silicon photonic integrated circuits (PICs). Bonding and transfer printing have been the popular approaches for integration of III–V gain media with silicon PICs. Similar approaches are also being considered for ferroelectrics to enable larger RF modulation bandwidths, higher linearity, lower optical loss integrated optical modulators on chip. In this paper, we review existing integration strategies of III–V materials and present a route towards hybrid integration of both III–V and ferroelectrics on the same chip. We show that adiabatic transformation of the optical mode between hybrid ferroelectric and silicon sections enables efficient transfer of optical modal energies for maximum overlap of the optical mode with the ferroelectric media, similar to approaches adopted to maximize optical overlap with the gain section, thereby reducing lasing thresholds for hybrid III–V integration with silicon PICs. Preliminary designs are presented to enable a foundry compatible hybrid integration route of diverse functionalities on silicon PICs.

III-V 和铁电材料的混合集成被广泛用于增强硅光子集成电路 (PIC) 的功能。键合和转移印刷已成为将 III-V 增益介质与硅 PIC 集成的流行方法。类似的方法也正在考虑用于铁电体，以实现更大的射频调制带宽、更高的线性度、更低的光损耗，并在芯片上集成光调制器。在本文中，我们回顾了现有的 III-V 材料集成策略，并提出了在同一芯片上混合集成 III-V 和铁电体的途径。我们表明，混合铁电和硅部分之间的光学模式的绝热转换能够有效传输光学模式能量，以实现光学模式与铁电介质的最大重叠，类似于采用最大化与增益部分的光学重叠的方法，从而减少激光与硅 PIC 的混合 III-V 集成的阈值。提出了初步设计，以在硅 PIC 上实现多种功能的代工厂兼容混合集成路线。