We optimize the structure of a silicon-based InAs/InGaAs quantum dot square microcavity laser with an output waveguide structure. By designing a new laser structure, the emission wavelength is extended to 1550 nm. We investigate the structure parameters that affect the quality factor and optical mode of the square microcavity, including the side length of the microcavity, the width of the output waveguide, the cladding layer thickness and the etching depth. By connecting the output waveguide at the edge-midpoint of the square microcavity, both the unidirectional emission and mode selectivity can be obtained, which avoids mode competition. The 1550 nm wavelength single-mode laser is beneficial and has reat significance for the development of silicon-based optoelectronic integration.

我们优化了具有输出波导结构的硅基 InAs/InGaAs 量子点方形微腔激光器的结构。通过设计新的激光器结构，发射波长扩展到1550 nm。我们研究了影响方形微腔的品质因数和光模的结构参数，包括微腔的边长、输出波导的宽度、包层厚度和蚀刻深度。通过在方形微腔的边缘中点连接输出波导，可以获得单向发射和模式选择性，避免模式竞争。1550nm波长的单模激光器对硅基光电集成的发展具有重要意义。