Polarization-inverted multilayers are promising for application in bulk acoustic wave (BAW) resonators, BAW transformers, surface acoustic wave (SAW) devices and nonlinear optics crystals (NLOs). However, is difficult to obtain a polarization-inverted multilayer by a conventional polarization control technique using a buffer layer. Recently developed ion beam-induced polarization inversion film growth is attractive for multilayer fabrication. Low-energy ion beam irradiation (several hundred electron volts) during film growth enables the growth of polarization-inverted (0001)/(000) c-axis normal ZnO, AlN and ScAlN piezoelectric films. These structures excite a thickness extensional mode (longitudinal wave). In contrast, high-energy ion beam irradiation (300–3000eV) induces c-axis parallel film growth which allows the fabrication of c-axis horizontal inversion ZnO and AlN multilayers. These structures are suitable for thickness shear mode (TSM) film bulk acoustic resonators (FBARs), TSM liquid sensors and out-of-plane NLOs. This review introduces the unusual polarization inversion film growth induced by ion beams and its applications. On the other hand, a (001)/(00) polarization-inverted layer can be obtained using ferroelectric films. This paper also provides the result of external electric field-induced polarization inversion of PbTiO₃ epitaxial films.

偏振反转多层膜有望应用于体声波 (BAW) 谐振器、BAW 变压器、表面声波 (SAW) 器件和非线性光学晶体 (NLO)。然而，通过使用缓冲层的传统偏振控制技术难以获得偏振反转多层。最近开发的离子束诱导极化反转膜生长对于多层制造具有吸引力。薄膜生长过程中的低能量离子束照射（几百电子伏特）能够生长极化反转的（0001）/（000 ）c轴法线ZnO、AlN和ScAlN压电薄膜。这些结构激发厚度扩展模式（纵波）。相反，高能离子束辐照（300-3000eV）诱导c- 轴平行薄膜生长，允许制造c轴水平反转 ZnO 和 AlN 多层。这些结构适用于厚度剪切模式 (TSM) 薄膜体声波谐振器 (FBAR)、TSM 液体传感器和平面外 NLO。这篇综述介绍了离子束引起的不寻常的极化反转膜生长及其应用。另一方面，可以使用铁电膜获得(001)/(00)极化反转层。本文还提供了外电场诱导的PbTiO ₃外延膜极化反转的结果。