Hydrogen-induced changes in the characteristics of Pt/GaN rectifiers fabricated on bulk GaN were studied using current–voltage (I–V), capacitance–voltage (C–V), and impedance spectroscopy measurements. The results were similar to those for Pt/GaN rectifiers fabricated on sapphire substrates [Y. Irokawa, Jpn. J. Appl. Phys. 59, 120901 (2020)]. That is, an ambient H₂ atmosphere reduced the Schottky barrier height and the resistance of the semiconductor space-charge region but did not affect the ideality factor, carrier concentration, or capacitance of the semiconductor space-charge region, suggesting that the quality of the GaN layers was not the origin of the observed H₂-induced changes.

使用电流 - 电压 ( I - V )、电容 - 电压 ( C - V ) 和阻抗谱测量，研究了在体 GaN 上制造的 Pt​​/GaN 整流器的氢诱导特性变化。结果类似于在蓝宝石衬底上制造的 Pt​​/GaN 整流器的结果 [Y. 伊洛川，Jpn。J. 应用程序 物理。59 , 120901 (2020)]。也就是说，环境 H ₂气氛降低了半导体空间电荷区的肖特基势垒高度和电阻，但不影响半导体空间电荷区的理想因子、载流子浓度或电容，表明半导体空间电荷区的质量GaN 层不是观察到的 H ₂的起源-诱发的变化。