Single Shockley-type stacking faults (1SSFs) in the 4H-SiC epilayer exhibits numerous expansion patterns determined by the relationship between initial basal-plane dislocation (BPD) direction and Burgers vector. In this study, patterns of BPDs and 1SSFs generated by UV illumination near linear scratches on a SiC epilayer were investigated. The correlation between the observed 1SSF patterns and the scratch line directions was discussed by considering shear stress near the scratch lines. This result suggests that it is possible to form 1SSFs with a desired shape by adjusting the components of shear stress through the setting of scribing conditions.

4H-SiC 外延层中的单肖克利型堆垛层错 (1SSF) 表现出多种扩展模式，由初始基面位错 (BPD) 方向和伯格斯矢量之间的关系决定。在这项研究中，研究了由紫外线照射在 SiC 外延层上的线性划痕附近产生的 BPD 和 1SSF 的图案。通过考虑划痕线附近的剪切应力，讨论了观察到的 1SSF 图案与划痕线方向之间的相关性。该结果表明，通过设置划线条件来调整剪切应力的分量，可以形成具有所需形状的 1SSF。