In this study, we describe an active pixel sensor (APS) readout circuit using indium–tin–zinc-oxide (ITZO) thin-film transistors (TFTs). The APS readout circuit with a pixel size of 90μm was fabricated using ITZO TFTs with a channel length of 2μm, and its performance was experimentally evaluated. The ITZO TFTs were found to have good low-frequency noise performance with an extracted Hooge’s parameter (α _H) of 3.5נ10⁻³, and the APS exhibits a high DC voltage gain of ∼0.81 with satisfactory linearity in a wide output voltage range of ∼6.4V as well as manageable response times of less than 15μs. The obtained results show the potential of our APS circuits to be applied to TFT-based image sensors with enhanced image quality.

在本研究中，我们描述了使用铟锡锌氧化物 (ITZO) 薄膜晶体管 (TFT) 的有源像素传感器 (APS) 读出电路。在APS为90的像素大小读出电路μ米使用ITZO的TFT为2的信道长度，制作μ m和其性能进行了实验评价。发现 ITZO TFT 具有良好的低频噪声性能，提取的 Hooge 参数 ( α _H ) 为 3.5נ10 ^-3，并且 APS 表现出约 0.81 的高直流电压增益，在宽输出电压范围内具有令人满意的线性度∼6.4V 以及小于 15 μ 的可管理响应时间s。获得的结果表明我们的 APS 电路有潜力应用于具有增强图像质量的基于 TFT 的图像传感器。