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Investigation of the upper critical field in artificially engineered Nb/V/Ta superlattices
Japanese Journal of Applied Physics ( IF 1.5 ) Pub Date : 2021-05-18 , DOI: 10.35848/1347-4065/abfdc1
Fuyuki Ando 1 , Ryo Kawarazaki 1 , Masahiro Naritsuka 2 , Yuichi Kasahara 2 , Yuta Miyasaka 1 , Hideki Narita 1 , Daisuke Kan 1 , Yoichi Shiota 1 , Takahiro Moriyama 1 , Yuichi Shimakawa 1 , Yuji Matsuda 2 , Teruo Ono 1, 3
Affiliation  

Artificially engineered superlattice offers highly flexible control of the quantized electronic state by manipulating its lattice structure. We fabricated artificially engineered superlattices [Nb/V/Ta] n as a new class of superconducting superlattices and investigated the upper critical field H c2 in terms of the structural difference. It is found that the out-of-plane upper critical field ${H}_{{\rm{c}}2\perp }$ significantly increases compared with that of a Nb single layer film as the thickness of the constituent Nb, V, and Ta layers becomes thin. In the case of the superlattice [Nb/V/Ta] n , the ${H}_{{\rm{c}}2\perp }$ is basically governed by the orbital pair-breaking effect rather than Pauli pair-breaking effect and increases only when the crystalline size of the superlattice decreases by the insertion of V layers. Thus, we conclude that the shortening of the coherence length of Cooper pairs due to the crystalline disorder predominantly contributes to the increase of the ${H}_{{\rm{c}}2\perp }$ in the superlattice [Nb/V/Ta] n .



中文翻译:

人工设计的 Nb/V/Ta 超晶格中上临界场的研究

人工设计的超晶格通过操纵其晶格结构提供对量子化电子状态的高度灵活的控制。我们制造了人工设计的超晶格 [Nb/V/Ta] n作为一类新的超导超晶格,并根据结构差异研究了上临界场H c2。发现随着组成 Nb、V 和 Ta 层的厚度变薄,与 Nb 单层膜相比,面外上临界场显着增加。在超晶格 [Nb/V/Ta] n 的情况下 ${H}_{{\rm{c}}2\perp }$ ${H}_{{\rm{c}}2\perp }$基本上由轨道对断裂效应而不是泡利对断裂效应控制,并且仅当超晶格的晶体尺寸因 V 层的插入而减小时才会增加。因此,我们得出结论,由于晶体无序导致的 Cooper 对相干长度的缩短主要有助于${H}_{{\rm{c}}2\perp }$超晶格 [Nb/V/Ta] n 的增加

更新日期:2021-05-18
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