C₂F₄ is a potential etching gas for high aspect ratio etching of SiO₂ films owing to its high etch rate. However, it is difficult to fill C₂F₄ to a gas cylinder with high pressure for mass production due to its high reactivity. To overcome this problem, we developed an etching system, where the on-site synthesized C₂F₄ from CF₄ using a VHF plasma was supplied directly into the etching reactor. It was demonstrated that SiO₂ etching using synthesized-C₂F₄/O₂/Ar gas mixture plasma was carried out successfully and the etch rate became 2.7 times higher than that of CF₄/O₂/Ar gas mixture plasma.

中文翻译：

---

用CF ₄现场合成C ₂ F ₄对SiO ₂薄膜进行反应离子刻蚀工艺

由于其高蚀刻速率，C ₂ F ₄是用于SiO ₂膜的高纵横比蚀刻的潜在蚀刻气体。然而，由于C ₂ F ₄的高反应性，很难将C ₂ F ₄填充到高压气瓶中进行大规模生产。为了克服这个问题，我们开发了一种蚀刻系统，其中使用 VHF 等离子体从 CF ₄现场合成的 C ₂ F ₄直接供应到蚀刻反应器中。已证实的SiO ₂使用合成-C蚀刻₂ ˚F ₄ / O ₂/Ar气体混合等离子体成功进行，蚀刻速率比CF ₄ /O ₂ /Ar气体混合等离子体高2.7倍。