The proliferation of place-and-forget devices driven by the exponentially-growing Internet of Things industry has created a demand for low-voltage thin-film transistor (TFT) electronics based on solution-processible semiconductors. Amongst solution-processible technologies, TFTs based on semiconducting single-walled carbon nanotubes (sc-SWCNTs) are a promising candidate owing to their comparatively high current driving capability in their above-threshold region at low voltages, which is desirable for applications with constraints on supply voltage and switching speed. Low-voltage above-threshold operation in sc-SWCNTs is customarily achieved by using high-capacitance-density gate dielectrics such as metal-oxides fabricated via atomic layer deposition (ALD) and ion-gels. These are unattractive, as ALD requires complex-processing or exotic precursors, while ion-gels lead to slower devices with poor stability. This work demonstrates the fabrication of low-voltage above-threshold sc-SWCNTs TFTs based on a high-capacitance-density hybrid nanodielectric, which is composed of a readily-made AlO _x nanolayer and a solution-processed self-assembled monolayer (SAM). The resultant TFTs can withstand a gate-channel voltage of 1–2 V, which ensures their above-threshold operation with balanced ambipolar behavior and electron/hole mobilities of 7 cm² V⁻¹ s⁻¹. Key to achieving balanced ambipolarity is the mitigation of environmental factors via the encapsulation of the devices with an optimized spin-on polymer coating, which preserves the inherent properties of the sc-SWCNTs. Such balanced ambipolarity enables the direct implementation of CMOS-like circuit configurations without the use of additional dopants, semiconductors or source/drain electrode metals. The resultant CMOS-like inverters operate in the above-threshold region with supply voltages in the 1–2 V range, and have positive noise margins, gain values surpassing 80 V/V, and a bandwidth exceeding 100 kHz. This reinforces SAM-based nanodielectrics as an attractive route to easy-to-fabricate sc-SWCNT TFTs that can operate in the above-threshold region and that can meet the demand for low-voltage TFT electronics requiring moderate speeds and higher driving currents for wearables and sensing applications.

物联网行业呈指数增长，即插即用设备的激增催生了对基于溶液可加工半导体的低压薄膜晶体管 (TFT) 电子产品的需求。在可溶液加工的技术中，基于半导体单壁碳纳米管 (sc-SWCNT) 的 TFT 是一个很有前途的候选者，因为它们在低电压下在其阈值以上区域内具有相对较高的电流驱动能力，这对于具有限制的应用是可取的。电源电压和开关速度。sc-SWCNT 中的低电压阈值以上操作通常是通过使用高电容密度栅极电介质来实现的，例如通过原子层沉积 (ALD) 和离子凝胶制造的金属氧化物。这些都不好看，因为 ALD 需要复杂的处理或外来的前体，而离子凝胶会导致器件速度较慢且稳定性差。这项工作展示了基于高电容密度混合纳米电介质的低压阈值以上 sc-SWCNTs TFT 的制造，该电介质由易于制造的 Al2O3 组成。 _x 纳米层和溶液处理的自组装单层 (SAM)。所得到的 TFT 可以承受 1-2 V 的栅极沟道电压，这确保了它们的阈值以上操作，具有平衡的双极行为和 7 cm ² V ^-1 s ^{-1的电子/空穴迁移率}. 实现平衡双极性的关键是通过使用优化的旋涂聚合物涂层封装器件来减轻环境因素，这保留了 sc-SWCNT 的固有特性。这种平衡的双极性能够直接实现类 CMOS 电路配置，而无需使用额外的掺杂剂、半导体或源极/漏极金属。由此产生的类 CMOS 逆变器工作在阈值以上区域，电源电压在 1-2 V 范围内，具有正噪声容限、超过 80 V/V 的增益值和超过 100 kHz 的带宽。