HfO₂ has promising applications in semiconductors and optics due to its high dielectric constant and high refractive index. In this work, HfO₂ thin films were deposited by plasma enhanced atomic layer deposition (PEALD) using tetrakis-dimethylamino hafnium (TDMAH) and oxygen plasma. The process optimization to obtain high quality HfO₂ thin films with excellent uniformity over a 200 mm diameter is thoroughly discussed. The effects of deposition temperature and plasma parameters on the structural, mechanical, and optical properties, and the chemical composition of the films were investigated. Optimized process parameters yielding a high refractive index, high density, low impurities, low OH incorporation, low absorption in the UV spectral range, and high laser-induced damage threshold (LIDT) were selected for antireflection coatings. The HfO₂ thin films were incorporated into antireflection coatings designed for the fundamental wavelength at 1064 nm and its higher harmonics up to the 4^th order.

中文翻译：

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温度和等离子体参数对PEALD HfO ₂性能的影响

HfO ₂具有高介电常数和高折射率，在半导体和光学领域具有广阔的应用前景。在这项工作中，使用四二甲氨基铪 (TDMAH) 和氧等离子体通过等离子体增强原子层沉积 (PEALD) 沉积HfO ₂薄膜。获得高质量HfO ₂的工艺优化对直径超过 200 毫米具有出色均匀性的薄膜进行了深入讨论。研究了沉积温度和等离子体参数对薄膜结构、机械和光学性能以及化学成分的影响。为抗反射涂层选择了可产生高折射率、高密度、低杂质、低 OH 掺入、紫外光谱范围内的低吸收和高激光诱导损伤阈值 (LIDT) 的优化工艺参数。将 HfO ₂薄膜结合到抗反射涂层中，该涂层专为 1064 nm 的基波波长及其高达 4^阶的高次谐波而设计。