Research in the field of photonic integrated circuits (PICs) is taking a boost, especially because of its compatibility with the modern complementary metal-oxide semiconductor fabrication technology. Silicon-on-insulator slot waveguides are a burgeoning platform for sophisticated on-chip integration applications and have been extensively leveraged for PICs. Here the structural optimization and parametric analysis of the slot waveguide geometry for optical enhancement and nanoscale confinement in the C band are presented. Theoretical investigations of the mode field distribution, field confinement factor and effective refractive index for distinct slot waveguide structures are critically examined and comprehensively evaluated. We present four types of slot waveguides, including conventional silicon-on-insulator vertical slot waveguides, slot waveguides using nitrides materials in slot regions, slot waveguides using photonic crystal slabs with air holes, and horizontal slot waveguides with aluminum nitride slots. We demonstrate that by the use of photonic crystal slabs and the presence of nitrides slots, field confinement factors can be enhanced.

中文翻译：

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用于 C 波段光放大限制的绝缘体上硅缝隙波导设计

光子集成电路 (PIC) 领域的研究正在蓬勃发展，特别是因为它与现代互补金属氧化物半导体制造技术兼容。绝缘体上硅缝隙波导是用于复杂片上集成应用的新兴平台，并已广泛用于 PIC。这里介绍了用于 C 波段光学增强和纳米级限制的缝隙波导几何结构的结构优化和参数分析。对不同狭缝波导结构的模场分布、场限制因子和有效折射率的理论研究进行了严格检查和综合评估。我们介绍了四种类型的缝隙波导，包括传统的绝缘体上硅垂直缝隙波导，在狭缝区域使用氮化物材料的狭缝波导，使用带有空气孔的光子晶体板的狭缝波导，以及带有氮化铝狭缝的水平狭缝波导。我们证明，通过使用光子晶体板和氮化物槽的存在，可以增强场限制因素。