To enhance the performances of copper (I) oxide (Cu₂O)/silicon (Si) heterojunctions, it is crucial to improve their interface quality and control their surface microstructures. Here, two kinds of pyramid-textured and nanostructured copper (I) oxide/silicon heterojunctions were fabricated by adjusting the substrate bias during magnetron sputtering. Scanning electron microscopy, X-ray diffraction, ultraviolet (UV)–visible spectroscopy and I–U tests were performed to characterize their morphology, structure and optical and electrical properties. It was found that copper (I) oxide/silicon heterojunctions exhibited high adhesion quality at the interface and a controllable shape of building blocks of copper (I) oxide thin films. The effects of substrate bias on the morphology and deposition rate of copper (I) oxide thin films were further revealed. Relative to the case of +50 V, copper (I) oxide thin films deposited at +150 V showed a more significant (111)-preferred orientation and a much lower reflectance, particularly in the UV region. In addition, the I–U characteristic test results showed that the forward conduction voltages are 1.85 and 0.5 V and the reverse breakdown voltages are −19 and −17 V for the copper (I) oxide/silicon heterojunctions prepared at V _s = +50 V and V _s = +150 V, respectively. This work has important guiding significance for the preparation of copper (I) oxide/silicon heterojunctions with high interface quality and controllable surface microstructures. It also suggests that copper (I) oxide/silicon heterojunctions may have potential applications in the fields of UV resistance, UV sensors, solar cells and diodes.

中文翻译：

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新型金字塔纹理和纳米结构的 Cu2O/Si 异质结的制备

为了提高铜（I）氧化物（Cu ₂ O）/硅（Si）异质结的性能，提高其界面质量和控制其表面微观结构至关重要。在这里，通过在磁控溅射过程中调整衬底偏压，制造了两种金字塔结构和纳米结构的氧化铜 (I) 氧化物/硅异质结。扫描电子显微镜、X 射线衍射、紫外 (UV)-可见光光谱和I - U进行了测试以表征它们的形态、结构以及光学和电学特性。发现氧化铜 (I) 氧化物/硅异质结在界面处表现出高粘附质量和可控形状的氧化铜 (I) 氧化物薄膜构建块。进一步揭示了衬底偏置对氧化铜 (I) 薄膜的形态和沉积速率的影响。相对于 +50 V 的情况，在 +150 V 下沉积的氧化铜 (I) 薄膜显示出更显着的 (111) 优先取向和低得多的反射率，尤其是在 UV 区域。此外，I - U特性测试结果表明，对于在V _s = +50 V 和V _s = +150 下制备的铜 (I) 氧化物/硅异质结，正向导通电压为 1.85 和 0.5 V，反向击穿电压为 -19 和 -17 V V，分别。该工作对制备界面质量高、表面微结构可控的氧化铜/硅异质结具有重要的指导意义。它还表明，铜 (I) 氧化物/硅异质结可能在抗紫外线、紫外线传感器、太阳能电池和二极管等领域具有潜在应用。